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V-H. Le

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Scholarly Papers (1)

1.

Toward Full Relaxation of Ssoi Substrates for Pfet Device Fabrication

Number of pages: 13 Posted: 13 Jun 2025
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
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Abstract:

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sSOI, Relaxation, Dual channel, Ion implantation, Multiple interation