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Aleksandr Klimov

Ioffe Institute

Politekhnicheskaya 26

St Petersburg, 194021

Russia

SCHOLARLY PAPERS

1

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0

Scholarly Papers (1)

1.

Etcing of InAs(100) surface with HBr-based solutions

Number of pages: 18 Posted: 29 Aug 2025
Ioffe Institute, Ioffe Institute, Ioffe Institute, Ioffe Institute, Ioffe Institute, St Petersburg University, Saint Petersburg State University and affiliation not provided to SSRN
Downloads 10 (1,541,665)

Abstract:

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wet etching, narrow-gap III-V semiconductors, XPS, Photoluminescence, electronic passivation