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Chengyuan Dong

affiliation not provided to SSRN

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Amorphous indium-gallium-zinc-oxide thin film transistors passivated by annealing oxidized MoOx:Ta layers

Number of pages: 21 Posted: 02 Sep 2025
Yongliang Chen, Liangdong Li, Zecui Gao, Hennrik Schmidt, Thomas Huber, Enrico Franzke and Chengyuan Dong
affiliation not provided to SSRN, affiliation not provided to SSRN, Vienna University of Technology - Institute of Materials Science and Technology, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN and affiliation not provided to SSRN
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Thin film transistor, InGaZnO, Molybdenum oxide, Passivation layer, Bias stress stability, light illumination stability