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Alesya V. Parfeneva

Ioffe Institute

Politekhnicheskaya 26

St Petersburg, 194021

Russia

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Scholarly Papers (1)

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Topographically-Guided van der Waals Epitaxy: Selective Growth of AlN Nanowalls on h-BN Step Edges

Number of pages: 21 Posted: 13 Sep 2025
Albert M. Dautov, Vladimir G. Dubrovskii, Talgat Shugabaev, Vera V. Lendyashova, Konstantin P. Kotlyar, Alexey Kuznetsov, Prokhor Alekseev, Mikhail E. Popov, Igor V. Shtrom, Adilet Toksumakov, Davit Ghazaryan, Alesya V. Parfeneva, Aleksey V. Arsenin, Alexey D. Bolshakov, George E. Cirlin and Vladislav Gridchin
affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, affiliation not provided to SSRN, Moscow Center for Advanced Studies, Ioffe Institute, Ioffe Institute, affiliation not provided to SSRN, affiliation not provided to SSRN, Yerevan State University, Ioffe Institute, Moscow Center for Advanced Studies, Moscow Center for Advanced Studies, affiliation not provided to SSRN and affiliation not provided to SSRN
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Abstract:

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AlN, van der Waals epitaxy, h-BN, two-dimensional materials, nanowires, nanowalls