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Leenendra Chowdary Gunnam

SRM University AP

Department of Economics, School of Liberal Arts an

Mangalagiri, 522503

India

SCHOLARLY PAPERS

1

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35

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0

Scholarly Papers (1)

1.

A 75.5 TOPS/W High Area Efficiency Computing-in-Memory Based on Single-Ended 4-kb SRAM Using 16-nm FinFET Technology

Number of pages: 36 Posted: 28 Oct 2025
National Sun Yat-sen University, National Sun Yat-sen University, National Sun Yat-sen University, Virginia Tech, Virginia Tech and SRM University AP
Downloads 35 (1,263,436)

Abstract:

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computing-in-memory (CIM), convolution, FINFET, Single-ended SRAM, ultra-low threshold voltage (ULVT) transistors