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Cheng-Hsien Yeh

National Cheng Kung University

No. 1號, Dasyue Rd, East District, Tainan City, 701

Tainan, 701

Taiwan

  • National Cheng Kung University

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Band-gap engineering of halide perovskite quantum dots-based bilayer structure with enhanced resistive switching memory properties

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Band-gap engineering of halide perovskite quantum dots-based bilayer structure with enhanced resistive switching memory properties

Number of pages: 35 Posted: 26 Nov 2025
Cheng-Hsien Tu, Po-Kai Chiu, Cheng-Hsien Yeh, Hung-Chieh Hsu and Chuan-Feng Shih
National Cheng Kung University, National Cheng Kung University, National Cheng Kung University, National Cheng Kung University and National Cheng Kung University
Downloads 36 (1,326,242)

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Perovskite Quantum Dots, Resistive Random-Access Memory (RRAM), Halide Engineering, Band Alignment, Bilayer Structure

Band-gap engineering of halide perovskite quantum dots-based bilayer structure with enhanced resistive switching memory properties

Number of pages: 35 Posted: 26 Nov 2025
Cheng-Hsien Tu, Po-Kai Chiu, Cheng-Hsien Yeh, Hung-Chieh Hsu and Chuan-Feng Shih
National Cheng Kung University, National Cheng Kung University, National Cheng Kung University, National Cheng Kung University and National Cheng Kung University
Downloads 20 (1,513,226)

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Perovskite Quantum Dots, Resistive Random-Access Memory (RRAM), Halide Engineering, Band Alignment, Bilayer Structure