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Kangkai Fan

Shenzhen University

3688 Nanhai Road, Nanshan District

Shenzhen, 518060

China

SCHOLARLY PAPERS

1

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45

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0

Scholarly Papers (1)

1.

Improved RF Linearity AlGaN/AlN/GaN High Electron Mobility Transistor on Low Loss Mn-doped Semi-Insulating GaN Substrate

Number of pages: 23 Posted: 18 Dec 2025
Chang Gung University, Chang Gung University, Chang Gung University, Chang Gung University, Shenzhen University and Shenzhen University
Downloads 45 (1,145,425)

Abstract:

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semi insulating GaN substrate, HEMT, Manganese, linearity