An Analytical Two-Dimensional C-V Model of AlGaN/GaN MODFET for High Speed Circuit Applications
The IUP Journal of Telecommunications, Vol. V, No. 4, pp. 49-68, July 2013
Posted: 7 Jul 2017
Date Written: July 15, 2013
In the present paper, a two-dimensional analytical model is developed for the Capacitance-Voltage (C-V) characteristics of a pseudomorphic AlGaN/GaN HEMTfor high speed circuit applications. The current-voltage characteristics have been obtained for a device of 50 nm gate length. The various fringing capacitances are also taken into account in the present model. The small-signal parameters like transconductance, drain conductance and cut-off frequency have also been evaluated. A high cut-off frequency of 220 GHz and a peak transconductance of 161.5 mS/mm for a gate length of 50 nm is obtained, which is vital for millimeter microwave applications. Finally, the obtained results were compared with the experimental data showing a close agreement and the validity of the model.
Keywords: AlGaN/GaN Pseudomorphic HEMT, Cut-Off Frequency, Gate-Drain Capacitance, Gatesource Capacitance, Transconductance, Two-Dimensional Model
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