Electrical Behavior of Cd0.3Zn1.1xS0.7 Thin Films for Non-Heat Light Emitting Diodes

TraektoriĆ¢ Nauki = Path of Science, Vol. 3, No. 6, 2017

9 Pages Posted: 24 Jul 2017

See all articles by Cliff Mosiori

Cliff Mosiori

Technical University of Mombasa

John Maera

Maasai Mara University

Reuben Shikambe

Kenyatta University

Robert Magare

Technical University of Mombasa

Date Written: JUNE 20, 2017

Abstract

In developing countries like Kenya, solution processing technique is the cheapest and simplest technique to grow inorganic composites thin films. This method was used to grow thin films of Cd0.3Zn1.1xS0.7 on ordinary microscope Perspex substrate slides from aqueous solutions of Zinc chloride and cadmium chloride in ammonia solution. A solution of triethanalomine was used as a complexing agent while thiourea was used as source of sulphide ions. Electrical properties as a function of their thicknesses were obtained by varying deposition time while all other parameters were maintained constant. Using a resistance measurement device and a Gauss meter, resistivity and the conductivity of the films were found to be thickness dependent with semiconductor nature.

Keywords: Complexing Agent; Zinc; Cadmium; Thiourea; Resistivity; Sulphur

Suggested Citation

Mosiori, Cliff and Maera, John and Shikambe, Reuben and Magare, Robert, Electrical Behavior of Cd0.3Zn1.1xS0.7 Thin Films for Non-Heat Light Emitting Diodes (JUNE 20, 2017). TraektoriĆ¢ Nauki = Path of Science, Vol. 3, No. 6, 2017. Available at SSRN: https://ssrn.com/abstract=3006258

Cliff Mosiori (Contact Author)

Technical University of Mombasa ( email )

Tom Mboya Street
P. O. Box 90420-80100
Mombasa, 90420
Kenya

John Maera

Maasai Mara University ( email )

Narok
Kenya

Reuben Shikambe

Kenyatta University

P.O. Box 43844
Nairobi, Nairobi 00100
Kenya

Robert Magare

Technical University of Mombasa ( email )

Tom Mboya Street
P. O. Box 90420-80100
Mombasa, 90420
Kenya

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