Low Temperature Solution-Based Treatment for Highly Passivated Si/TiO2 Heterojunction

3 Pages Posted: 12 Feb 2018

See all articles by Girija Sahasrabudhe

Girija Sahasrabudhe

Department of Chemistry, Princeton University

Date Written: December 21, 2017

Abstract

Thin film-based second and third generation photovoltaics (PVs) are avidly investigated for their potential for utility scale applications. Organic thin film (PEDOT) and silicon-based PVs are shown to have moderate device efficiency. To further improve efficiency, silicon is sandwiched between thin films of PEDOT and TiO2. Thin films of TiO2 synthesized at 100°C have been shown to make efficient (~12%) PEDOT/Si/TiO2-based PVs; TiO2 functions as a holeblocker. Lower efficiencies of the PVs than predicted by theory is attributed to poor passivation of the Si/TiO2 interface. To improve the interface passivation, the Si/TiO2 interface is treated under various chemical conditions. One such treatment yielded very high level of passivation (SRV ~ 15 cm/s).

Keywords: Heterojunction, Reverse Saturation Current, Surface Recombination Velocity, Titanium tetra (tert-butoxide), X-Ray Photoelectron Spectroscopy

Suggested Citation

Sahasrabudhe, Girija, Low Temperature Solution-Based Treatment for Highly Passivated Si/TiO2 Heterojunction (December 21, 2017). International Conference on Advances in Thermal Systems, Materials and Design Engineering (ATSMDE2017), Available at SSRN: https://ssrn.com/abstract=3101591 or http://dx.doi.org/10.2139/ssrn.3101591

Girija Sahasrabudhe (Contact Author)

Department of Chemistry, Princeton University ( email )

22 Chambers Street
Princeton, NJ 08544-0708
United States

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