Low Temperature Solution-Based Treatment for Highly Passivated Si/TiO2 Heterojunction
3 Pages Posted: 12 Feb 2018
Date Written: December 21, 2017
Thin film-based second and third generation photovoltaics (PVs) are avidly investigated for their potential for utility scale applications. Organic thin film (PEDOT) and silicon-based PVs are shown to have moderate device efficiency. To further improve efficiency, silicon is sandwiched between thin films of PEDOT and TiO2. Thin films of TiO2 synthesized at 100°C have been shown to make efficient (~12%) PEDOT/Si/TiO2-based PVs; TiO2 functions as a holeblocker. Lower efficiencies of the PVs than predicted by theory is attributed to poor passivation of the Si/TiO2 interface. To improve the interface passivation, the Si/TiO2 interface is treated under various chemical conditions. One such treatment yielded very high level of passivation (SRV ~ 15 cm/s).
Keywords: Heterojunction, Reverse Saturation Current, Surface Recombination Velocity, Titanium tetra (tert-butoxide), X-Ray Photoelectron Spectroscopy
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