Design, Modelling and Simulation of MEMS Piezo-Resistive Pressure Sensor with Clamped Edge Silicon Carbide Circular Diaphragm
Proceedings of 3rd International Conference on Internet of Things and Connected Technologies (ICIoTCT), 2018 held at Malaviya National Institute of Technology, Jaipur (India) on March 26-27, 2018
6 Pages Posted: 9 May 2018
Date Written: April 28, 2018
Microelectromechanical Systems (MEMS) pressure sensors are premeditated and characterised in this paper. Sensors with piezo-resistive transduction mechanism have been preferred due to their various benefits such as small dimension, high sensitivity, low cost and simple fabrication. The paper tries to shift focus from the conventional CMOS material in order to draw attention towards silicon carbide based piezo-resistors. Deflection and stress of the piezo-resistive pressure sensors have been computed for silicon carbide clamped edge circular shaped diaphragm according to the theory of elasticity. The two most important characteristics of a pressure sensor i.e. sensitivity and linearity have been reported for the (0-100) psi pressure range. Simulation of results obtained have been done to state the significance of parameters such as effective resistor length, sensitivity etc.
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