Study of Titanium Aluminium Nitride Deposited on Silicon Wafer Using RF Magnetron Sputtering
International Journal of Multidisciplinary Research and Modern Education (IJMRME), Volume 4, Issue 1, 2018
6 Pages Posted: 8 Aug 2018
Date Written: July 20, 2018
A thin layer of Titanium Aluminium Nitride was deposited on Silicon wafer by using reactive RF magnetron sputtering at a frequency of 13.56 MHz. The crystallite size and surface morphology of treated and untreated coatings was studied using Scanning Electron Microscope analysis and X-Ray diffraction. The corrosion current, corrosion rate and electrochemical behaviour was also determined using Electrochemical Analyzer test. These improved materials have wide range of application in various fields such as bio implants, aerospace materials, corrosion resistant parts, electronics industries etc.
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