Study of Titanium Aluminium Nitride Deposited on Silicon Wafer Using RF Magnetron Sputtering

International Journal of Multidisciplinary Research and Modern Education (IJMRME), Volume 4, Issue 1, 2018

6 Pages Posted: 8 Aug 2018

See all articles by Suman Choudhury

Suman Choudhury

Birla Institute of Technology (BIT), Mesra - Department of Applied Physics

Suraj Kumar

Government of India

Sanjay Kumar Sinha

Birla Institute of Technology (BIT), Mesra - Department of Applied Physics

Date Written: July 20, 2018

Abstract

A thin layer of Titanium Aluminium Nitride was deposited on Silicon wafer by using reactive RF magnetron sputtering at a frequency of 13.56 MHz. The crystallite size and surface morphology of treated and untreated coatings was studied using Scanning Electron Microscope analysis and X-Ray diffraction. The corrosion current, corrosion rate and electrochemical behaviour was also determined using Electrochemical Analyzer test. These improved materials have wide range of application in various fields such as bio implants, aerospace materials, corrosion resistant parts, electronics industries etc.

Suggested Citation

Choudhury, Suman and Kumar, Suraj and Kumar Sinha, Sanjay, Study of Titanium Aluminium Nitride Deposited on Silicon Wafer Using RF Magnetron Sputtering (July 20, 2018). International Journal of Multidisciplinary Research and Modern Education (IJMRME), Volume 4, Issue 1, 2018. Available at SSRN: https://ssrn.com/abstract=3217229

Suman Choudhury (Contact Author)

Birla Institute of Technology (BIT), Mesra - Department of Applied Physics ( email )

Ranchi, 835215
India

Suraj Kumar

Government of India ( email )

India

Sanjay Kumar Sinha

Birla Institute of Technology (BIT), Mesra - Department of Applied Physics

Ranchi, 835215
India

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