Semiconducting Properties of Ge-doped BaSnO3 Ceramic
Journal of Alloys and Compounds 506 (2010) 678–682
1 Pages Posted: 17 Jan 2019
Date Written: July 15, 2010
The electrical and optical properties of Ge-doped BaSnO3 ceramics sintered at various temperatures have been investigated to determine their semiconductor behavior. The electrical conductivity of Ge-doped BaSnO3 samples increases with increase in temperature, confirming that the samples exhibit a semiconductor behavior. A maximum conductivity value of 6.31 × 10−9 S/cm was observed for the sample sintered at 1200 °C. The optical band gaps of the Ge-doped BaSnO3 samples were determined by means of reflectance spectra. The variation of optical band gap with temperature was analyzed using Eg(T) = Ego + βT relation. The rate of change of the band gap β of BaSn0.99Ge0.01O3 was found to be 7.6 × 10 −4 (eV/°C). A minimum optical band gap value of 2.95 eV was observed for the sample sintered at 1400 °C. It is evaluated that BaSn0.99Ge0.01O3 is a wide band gap semiconductor and its semiconducting properties change with sintering temperature.
Keywords: BaSnO3, BaGeO3, perovskite, band gap, semiconductor, sintering, conductivity
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