Oxide Ion Conductors Developed from the Layer-Structured Ferroelectric Perovskite Bi 4Ti 3O 12

28 Pages Posted: 8 Jan 2019

See all articles by Changbai Long

Changbai Long

Xidian University - School of Advanced Materials and Nanotechnology; Xi'an Jiaotong University (XJTU) - Electronic Material Research Laboratory

Wei Ren

Xi'an Jiaotong University (XJTU) - Electronic Material Research Laboratory

Laijun Liu

Guilin University of Technology - Key laboratory of Nonferrous Materials and New Processing Technology

Yuanhua Xia

China Academy of Engineering Physics (CAEP) - Institute of Nuclear Physics and Chemistry

Huiqing Fan

Northwestern Polytechnical University, China - State Key Laboratory of Solidification Processing

Date Written: January 7, 2018

Abstract

Layer-structured perovskite Bi4Ti3O12 is a well-known lead-free ferroelectric and piezoelectric material. By solving the problems of high leakage current and polarization degradation associated with oxygen vacancies, Bi4Ti3O12 shows potential applications in both non-volatile memory devices and high-temperature sensors. In this paper, the high leakage is transformed into high level of ionic conductivity and new oxide ion conductors are developed from Bi4Ti3O12, and the oxygen transport mechanism in the layer-structured perovskite is investigated. Different Bi-stoichiometric compositions are presumably mixed hole and ion conductors with bulk conductivity (σb) of 10-4 and 10-3 S/cm orders of magnitude at 600 °C and 700°C, respectively. It is interesting that a combination of Bi deficiency and Mg doping on the Ti site results in high-performance oxide ion conduction for Bi4Ti3O12. Nominal starting composition with a formula of Bi3.88Ti2.92Mg0.08O11.74 exhibits oxide ion conductivity with σb of ∼10-2 S/cm and ionic transport number (tion) of 0.92 at 650 °C, which are well comparable to those of other known solid oxide electrolyte materials. Furthermore, this composition shows low conductivity degradation and good chemical stability in reducing atmosphere (5%H2/95%N2). This study opens up new horizons for Bi4Ti3O12 and other A-site Bi-based layer-structured perovskites as oxide ion conductors in addition to ferroelectric- and piezoelectric-based applications.

Keywords: Oxide ion conductor, Oxygen vacancy, Ionic conductivity, Layer-structured ferroelectric perovskite, Defect dipole

Suggested Citation

Long, Changbai and Ren, Wei and Liu, Laijun and Xia, Yuanhua and Fan, Huiqing, Oxide Ion Conductors Developed from the Layer-Structured Ferroelectric Perovskite Bi 4Ti 3O 12 (January 7, 2018). Available at SSRN: https://ssrn.com/abstract=3311603 or http://dx.doi.org/10.2139/ssrn.3311603

Changbai Long (Contact Author)

Xidian University - School of Advanced Materials and Nanotechnology ( email )

Xian, Shaanxi Province
China

Xi'an Jiaotong University (XJTU) - Electronic Material Research Laboratory ( email )

26 Xianning W Rd.
Xi'an Jiao Tong University
Xi'an, Shaanxi 710049
China

Wei Ren

Xi'an Jiaotong University (XJTU) - Electronic Material Research Laboratory

26 Xianning W Rd.
Xi'an Jiao Tong University
Xi'an, Shaanxi 710049
China

Laijun Liu

Guilin University of Technology - Key laboratory of Nonferrous Materials and New Processing Technology

Guilin 541004
China

Yuanhua Xia

China Academy of Engineering Physics (CAEP) - Institute of Nuclear Physics and Chemistry

Mianyang, Sichuan 621900
China

Huiqing Fan

Northwestern Polytechnical University, China - State Key Laboratory of Solidification Processing

127 YouYi Load
XiAn, Shaanxi 710072
China

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