On Approach of Estimation Time Scales of Relaxation of Concentration of Charge Carriers in High-Doped Semiconductor

International Journal of Information Technology, Modeling and Computing (IJITMC) Vol. 4, No.3, August 2016

9 Pages Posted: 13 Jun 2019

See all articles by E. L. Pankratov

E. L. Pankratov

Nizhny Novgorod State University

E.A. Bulaeva

Nizhny Novgorod State University

Date Written: August 2016

Abstract

In this paper we generalized recently introduced approach for estimation of time scales of mass transport. The approach have been illustrated by estimation of time scales of relaxation of concentrations of charge carriers in high-doped semiconductor. Diffusion coefficients and mobility of charge carriers and electric field strength in semiconductor could be arbitrary functions of coordinate.

Keywords: time scales; approach of estimation; arbitrary spatial dependences of diffusion coefficient and potential profiles

Suggested Citation

Pankratov, E. L. and Bulaeva, E.A., On Approach of Estimation Time Scales of Relaxation of Concentration of Charge Carriers in High-Doped Semiconductor (August 2016). International Journal of Information Technology, Modeling and Computing (IJITMC) Vol. 4, No.3, August 2016. Available at SSRN: https://ssrn.com/abstract=3396397 or http://dx.doi.org/10.2139/ssrn.3396397

E. L. Pankratov (Contact Author)

Nizhny Novgorod State University

Street Nevsky
Nizhny Novgorod, 603009
Russia

E.A. Bulaeva

Nizhny Novgorod State University

Street Nevsky
Nizhny Novgorod, 603009
Russia

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