Crystal Growth and Basic Transport and Magnetic Properties of MnBi 2Te 4

14 Pages Posted: 9 Sep 2019

See all articles by Poonam Rani

Poonam Rani

National Physical Laboratory

Ankush Saxena

National Physical Laboratory; CSIR-HRDC - Academy of Scientific and Innovative Research (AcSir)

Rabia Sultana

National Physical Laboratory; CSIR-HRDC - Academy of Scientific and Innovative Research (AcSir)

Vipin Nagpal

Jawaharlal Nehru University - School of Physical Sciences

S.S. Islam

Jamia Millia Islamia (A Central University) - Centre for Nanoscience and Nanotechnology

S. Patnaik

Jawaharlal Nehru University - School of Physical Sciences

V.P.S. Awana

National Physical Laboratory; CSIR-HRDC - Academy of Scientific and Innovative Research (AcSir)

Abstract

We report successful growth of magnetic topological insulator (MTI) MnBi2Te4. Depending, upon the heating schedule the phase formation in terms of various Bi2Te3 + MnTe structures viz. MnBi2Te4, MnBi4Te7, MnBi6Te10 and MnTe are seen in powder X-ray diffraction of crushed resultant crystals. The heating schedule basically deals with growth of the crystal from melt at 9000C and very slow cooling (10C/hr) to around 6000C with 24 hours hold time, followed by cooling to room temperature. Our detailed, PXRD Reitveld analysis showed that the resultant crystal is dominated by MnBi4Te7, MnBi6Te10 phases along with some MnTe content. The transport measurements showed a step like behavior at around 150K followed by cusp like structure in resistivity at around 25K (TP) due reported anti-ferromagnetic ordering of Mn. Both the resistivity transitions are seen clearly in dR/dT measurements at 150K and 20K respectively. The 25Ktransition of the compound is also seen in magnetic susceptibility. Low temperature (5K) magneto-resistance (MR) in applied field of up to 6 Tesla exhibited -ve MR below 3 Tesla and +ve for higher fields. Also, seen are steps in MR below one Tesla. The studied MnBi2Te4 MTI crystal could be a possible candidate for Quantum Anomalous Hall (QAH) effect.

Keywords: Magnetic Topological Insulator, Crystal Growth, Structural Details, Surface Morphology, Magnetism Electrical Transport

Suggested Citation

Rani, Poonam and Saxena, Ankush and Sultana, Rabia and Nagpal, Vipin and Islam, S.S. and Patnaik, S. and Awana, V.P.S., Crystal Growth and Basic Transport and Magnetic Properties of MnBi 2Te 4. Available at SSRN: https://ssrn.com/abstract=3446902 or http://dx.doi.org/10.2139/ssrn.3446902

Poonam Rani

National Physical Laboratory

New Delhi
110012
India

Ankush Saxena

National Physical Laboratory ( email )

New Delhi
110012
India

CSIR-HRDC - Academy of Scientific and Innovative Research (AcSir) ( email )

India

Rabia Sultana

National Physical Laboratory

New Delhi
110012
India

CSIR-HRDC - Academy of Scientific and Innovative Research (AcSir)

India

Vipin Nagpal

Jawaharlal Nehru University - School of Physical Sciences

India

S.S. Islam

Jamia Millia Islamia (A Central University) - Centre for Nanoscience and Nanotechnology

India

S. Patnaik

Jawaharlal Nehru University - School of Physical Sciences

India

V.P.S. Awana (Contact Author)

National Physical Laboratory ( email )

New Delhi
110012
India

CSIR-HRDC - Academy of Scientific and Innovative Research (AcSir) ( email )

India

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