Graphene Based Heterojunction PIN Device as Photo-Sensor

5 Pages Posted: 24 Jan 2020

See all articles by Debraj Modak

Debraj Modak

Abacus Institute of Engineering & Management

Ajanta Palit

Bengal Institute of Technology

Karabi Ganguly

JIS College of Engineering

Moumita Mukherjee

Adamas University

Date Written: January 8, 2020

Abstract

In this paper, we propose to prospects of Multiple-Graphene-Layer (MGL) based vertically doped p ++-n-n - -n ++ Avalanche photo diode-sensor in visible wavelength region (400nm-700nm). At room temperature, the authors have studied the high carrier mobility, intrinsic optical and mechanical properties in Graphene in various novel applications. To study the comparative analysis between the experimental and analytical observation of APD sensor, the authors have design, developed and experimentally verified Quantum-Corrected Field Maximum Classical Drift-Diffusion (QCFMCDD) mathematical model. The authors have compared the results with those of Si/4H- SiC super-lattice avalanche photo-diode sensor at 600 nm wavelength of incident radiation. It is noticed that Graphene performs better than Si/4H-SiC counterpart in terms of photo-responsivity (0.76A/W vs. 0.60A/W) and quantum efficiency (82% vs. 60%) for optical irradiation in visible wavelength region. The optical-electrical performance of 3x3 array type Graphene photo sensor diode is further analyzed and compared with those of its single array counterpart. In published literature, the available photo detector comprises with the designed photo-sensor shows the significant overall better performance in visible wavelength region.

Keywords: Optical-electrical properties, Multiple Graphene Layer (MGL), QCFMCDD model, Photo- responsivity, Quantum efficiency, 3x3 sensor array

Suggested Citation

Modak, Debraj and Palit, Ajanta and Ganguly, Karabi and Mukherjee, Moumita, Graphene Based Heterojunction PIN Device as Photo-Sensor (January 8, 2020). Proceedings of Industry Interactive Innovations in Science, Engineering & Technology (I3SET2K19), Available at SSRN: https://ssrn.com/abstract=3515779 or http://dx.doi.org/10.2139/ssrn.3515779

Debraj Modak (Contact Author)

Abacus Institute of Engineering & Management ( email )

Mogra, West Bengal 712148
India

Ajanta Palit

Bengal Institute of Technology ( email )

Kolkata, 700150
India

Karabi Ganguly

JIS College of Engineering ( email )

Block-A, Phase-III
WEST BENGAL
Kalyani, Nadia 741235
India

Moumita Mukherjee

Adamas University

Barasat - Barrackpore Road
P.O. - Jagannathpur
Kolkata, West Bengal 700126
India

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