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Oxygen Vacancies in Zirconium Oxide as the Blue Luminescence Centres And Traps Responsible for Charge Transport: Part II - Films

8 Pages Posted: 12 Oct 2020 Publication Status: Under Review

See all articles by Damir R. Islamov

Damir R. Islamov

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics

Vladimir A. Gritsenko

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics

Timofey V. Perevalov

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics

Vladimir Sh Aliev

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics

Vladimir A. Nadolinny

Russian Academy of Sciences (RAS) - Nikolaev Institute of Inorganic Chemistry

Albert Chin

National Chiao Tung University

Abstract

The origin of charge carrier traps in ZrO2 films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO2 films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO2. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO2 films.

Keywords: zirconium oxide, defects, oxygen vacancy, charge transport, EPR

Suggested Citation

Islamov, Damir R. and Gritsenko, Vladimir A. and Perevalov, Timofey V. and Aliev, Vladimir Sh and Nadolinny, Vladimir A. and Chin, Albert, Oxygen Vacancies in Zirconium Oxide as the Blue Luminescence Centres And Traps Responsible for Charge Transport: Part II - Films. Available at SSRN: https://ssrn.com/abstract=3708728 or http://dx.doi.org/10.2139/ssrn.3708728

Damir R. Islamov (Contact Author)

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics ( email )

Novosibirsk, 630090
Russia

Vladimir A. Gritsenko

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics

Novosibirsk, 630090
Russia

Timofey V. Perevalov

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics

Novosibirsk, 630090
Russia

Vladimir Sh Aliev

Russian Academy of Sciences (RAS) - Rzhanov Institute of Semiconductor Physics

Novosibirsk, 630090
Russia

Vladimir A. Nadolinny

Russian Academy of Sciences (RAS) - Nikolaev Institute of Inorganic Chemistry

Russia

Albert Chin

National Chiao Tung University

No. 1001, Daxue Rd, East District
Hsinchu, 300
Taiwan

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