Heterostructure Mos ₂@Zno Nanowires: Preparation, Ultrafast Nonlinear Optical Behavior and Photoelectric Functional Application

Abstract

The hetero-core-shell structure constructed from broad-band gap ZnO and narrow-band gap MoS₂ semiconductor can combine the advantages of ZnO and MoS₂ materials, such as significantly enhanced interlayer exciton pumping efficiency and adjustable saturable/reverse saturable nonlinear absorption (NLA) characteristics, which has important application potential in optoelectronic devices. In this work, based on the single/two step combination of magnetron sputtering physical deposition and chemical vapor deposition, MoS2 nanosheets, unmodified ZnO nanowires and uniform MoS₂ nanosheets-decorated ZnO heterostructure nanowires were successfully synthesized. The laser intensity, pulse width and wavelength dependent on studies of NLA in samples using Z-scan technique. Ultrafast dynamics of samples were researched using two-color pump probe technology which both possesses 325,380 and 400 nm wavelength excitation and the visible region has a wide range of detection. The measured ultrafast electron transfer was found to have a fast and slow processes component character, and its origin was discussed in detail. The photoelectric functional application performances and physical mechanisms are studied in theory and experiment. This paper will provide a theoretical basis and guidance for manipulation and improvement of the nonlinear optical properties of semiconductor micro/nano-material, and lay a theoretical and experimental basis for its application in optoelectronic devices.

Keywords: MoS2@ZnO heterojunction nanowires, Nonlinear optical materials, Ultrafast nonlinear optics. Photoelectric application characteristics