Characterization of Single Event Effect Simulation in Inp-Based High Electron Mobility Transistors

10 Pages Posted: 17 Feb 2022

See all articles by Shuxiang Sun

Shuxiang Sun

affiliation not provided to SSRN

Haitao Wu

affiliation not provided to SSRN

Linshuang Liu

affiliation not provided to SSRN

Ruxian Yao

affiliation not provided to SSRN

Hongying Mei

affiliation not provided to SSRN

Hua Wen

affiliation not provided to SSRN

Yinghui Zhong

Zhengzhou University

Abstract

The characteristics and mechanism of single event effects (SEEs) in InP-based High Electron Mobility Transistors (HEMTs) are investigated by technology computer-aided design (TCAD) simulations. The simulation results showed that the transient drain current became the highest after the heavy ion got incident in gate region, which means that the most sensitive location is gate region. With the increase of the linear energy transfer (LET) and drain voltage, the maximum drain current increases approximately linearly. The electric fields got increased with the increase of drain voltage, which led to the increase of the impact ionization rate, then producing more electron-hole pairs. Therefore, the drain current got increased with the increase of drain voltage. Moreover, the thin thickness of InGaAs channel can significantly reduce SEE on the device. And the In mole fraction of InGaAs channel has a small effect on SEE.

Keywords: InP based HEMT, SEE, LET, drain voltage

Suggested Citation

Sun, Shuxiang and Wu, Haitao and Liu, Linshuang and Yao, Ruxian and Mei, Hongying and Wen, Hua and Zhong, Yinghui, Characterization of Single Event Effect Simulation in Inp-Based High Electron Mobility Transistors. Available at SSRN: https://ssrn.com/abstract=4025955 or http://dx.doi.org/10.2139/ssrn.4025955

Shuxiang Sun (Contact Author)

affiliation not provided to SSRN ( email )

No Address Available

Haitao Wu

affiliation not provided to SSRN ( email )

No Address Available

Linshuang Liu

affiliation not provided to SSRN ( email )

No Address Available

Ruxian Yao

affiliation not provided to SSRN ( email )

No Address Available

Hongying Mei

affiliation not provided to SSRN ( email )

No Address Available

Hua Wen

affiliation not provided to SSRN ( email )

No Address Available

Yinghui Zhong

Zhengzhou University ( email )

100 Science Avenue
Zhengzhou, CO 450001
China

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