Resistance Switching of the Self-Assembly Stacked H-Bn Polycrystal Film

Abstract

2D materials resistive random-access memories (RRAMs), relying on the controllable movements of atoms or ions, have shown excellent nonvolatile resistance switching (NVRS) performances. However, current 2D materials are produced as monocrystal film with little attention paid to its stacked polycrystal state which is much more facile for atomic diffusions. Here, we propose a liquid phase self-assembly (LPSA) method to fabricate the stacked h-BN polycrystal film (SHPF) for the first time, and demonstrate its record NVRS behavior. Three device architectures with different electrodes are studied, all of which exhibit RS behaviors. The Al/h-BN/Pt device shows 120 I–V sweeps without degradation, and the Al/h-BN/ITO device exhibits an on/off ratio of ~10⁴. Specifically, the existence of O²- are found easily to bond with active electrode to form barrier, leading to significant variation of the NVRS properties. The proposed LPSA method can serve as a facile and low-cost way to fabricate memory materials on arbitrary substrates. Moreover, polycrystal film can facilitate the study of NVRS, which opens up a new avenue in clarifying the principle of NVRS for many potential functional applications.

Keywords: Polycrystal Film, Hexagonal boron nitride, resistive random-access memories, 2D materials, nonvolatile resistance switching