Large-Scale and High-Quality Iii-Nitride Membranes Through Microcavity-Assisted Crack Propagation by Engineering Tensile-Stressed Ni Layers

Abstract

Epitaxially-grown III-nitride alloys are one of tightly-bonded materials with mixed covalent-ionic bonds. This tight bonding presents tremendous challenges in developing III-nitride membranes even though the semiconductor membranes can provide numerous advantages by removing the thick, inflexible, and costly substrates. Herein, cavities with various sizes were introduced by overgrowing target layers such as undoped GaN and green LED on nanoporous templates prepared by electrochemical etching of n-type GaN. The large primary interfacial toughness was effectively reduced according to the design of the cavity density, and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni layers. The resulting III-nitride membranes maintained the high crystal quality even after the exfoliation due to the use of the GaN-based nanoporous templates having the same lattice constant. The microcavity-assisted crack propagation process developed for the current III-nitride membranes forms a universal process for developing various kinds of large-scale and high-quality semiconductor membranes.

Keywords: III-nitride alloys, Membranes, nanoporous, Ni stressor, light-emitting diodes, ultraviolet photodetectors