Improvement of Single Event Effects in Inp-Based Hemt with a Composite Channel of Ingaas/Inas/Ingaas

Abstract

In this paper, a hardened single event effects in InP-based HEMT with a InGaAs/InAs/InGaAs composite channel (CC HEMT) is investigated by the two-dimensional numerical simulations. The composite channel significantly improves the single event effects. Compared to the conventional InP-based HEMT with single InGaAs channel (SC HEMT), the peak drain current is markedly decreased for CC HEMT, owing to a high barrier in the InGaAs/InAs/InGaAs locates electrons in the middle of the sandwiched layer. In addition, the electron concentration of the InAs channel is smaller of CC HEMT than that of InGaAs channel of SC HEMT after ion strike. This also makes the decrease in drain current. Through optimal device parameters, the peak drain current of the CC HEMT with 9/1/5 nm In 0.8 Ga 0.2 As/InAs/In 0.8 Ga 0.2 channel is 129.1% smaller than that of the SC HEMT with In 0.53 Ga 0.47 channel.

Keywords: InP-based HEMT, composite channel, single event effects, drain current