Regulating Interface Schottky Barriers Towar High-Performance Self-Powered Imaging Photodetector

Abstract

Two-dimensional (2D) layered organic-inorganic hybrid perovskites have attracted wide attention in high-performance optoelectronic applications due to their good stability and excellent optoelectronic properties. Here, a high-performance self-powered photodetector is realized based on an asymmetrical metal-semiconductor-metal (MSM) devices structure (Pt-(PEA) 2 PbI 4 single crystal (SC)-Ag), which introduces a strong built-in electric field by regulating interface Schottky barriers. Benefitting from excellent built-in electrical potential, the photodetector shows an attractive photovoltaic characteristic without any power supply, including high photo-responsivity (114.07 mA W -1 ), fast response time (1.2 μs/582 μs) and  high detectivity (4.56×10 12 Jones) . Furthermore, it exhibits high-fidelity imaging capability at zero bias voltage. In addition, the photodetectors show excellent stability by maintaining 99.4% of the initial responsivity in air after 84 days. This work enables a significant advance in perovskite SC photodetector for developing stable and high-performance devices.

Keywords: 2D perovskite single crystal, asymmetric electrodes, self-powered, photo-imaging.