Understanding the Doping Effect in Cspbi2br Solar Cells: Crystallization Kinetics, Defect Passivation and Energy Level Alignment

21 Pages Posted: 26 Jul 2022

See all articles by Haoyu Wang

Haoyu Wang

University of Electronic Science and Technology of China (UESTC)

Ze Wang

University of Electronic Science and Technology of China (UESTC)

Xinyu Tang

University of Electronic Science and Technology of China (UESTC)

Li Liu

University of Electronic Science and Technology of China (UESTC)

Haolin Zhang

University of Electronic Science and Technology of China (UESTC)

Xianghua Yao

University of Electronic Science and Technology of China (UESTC)

Furong Wang

University of Electronic Science and Technology of China (UESTC)

Shuanghong Wu

University of Electronic Science and Technology of China (UESTC)

Xiaodong Liu

University of Electronic Science and Technology of China (UESTC)

Abstract

Additive engineering is an efficient approach to improve the photovoltaic performance of all-inorganic CsPbI2Br perovskite. However, rare attention has been paid to understand the effect of additives on the perovskite crystallization kinetics, which has a vital impact on the crystallinity and morphology of perovskite films. Herein, we found that the intermediate CsBr is formed during spin-coating of the CsPbI2Br precursor solution, which leads to the generation of iodide-rich perovskite (CsPbI2+xBr1-x) phases in the precursor film. This finally results in low-quality perovskite film after thermal annealing. To suppress the CsBr formation, lithium acetate (LiAc) was added into the CsPbI2Br precursor solution. We found that the intermediate CsBr is significantly suppressed after doping of LiAc, which results in less phase segregations in the precursor film and thus high-quality CsPbI2Br film after thermal annealing. The LiAc-doped perovskite film shows higher crystallinity, larger grain size and more preferential orientation than the pristine perovskite film. Furthermore, Ac‾ coordinates with Pb2+ to passivate uncoordinated Pb2+ defects, and Li+ aggregates at the perovskite surface to upwardly shift the Fermi level of CsPbI2Br closer to the conduction band edge, which lead to the suppressed trap-assisted recombination losses and the enhanced interfacial charge extraction in the LiAc-doped perovskite solar cells (PSCs). As a result, a remarkable power conversion efficiency (PCE) of 16.05% is achieved in LiAc-doped CsPbI2Br PSCs. Moreover, the devices exhibit superior thermal stability with almost no PCE degradation after 300 h of thermal aging at 85 °C. Our results provide deep insights into the doping effect of additive, especially on perovskite crystallization kinetics, which are important for the future optimization of high-performance all-inorganic PSCs.

Keywords: inorganic perovskite solar cells, Crystallization kinetics, Iodide-rich perovskite intermediate phase, Fermi level, Passivation

Suggested Citation

Wang, Haoyu and Wang, Ze and Tang, Xinyu and Liu, Li and Zhang, Haolin and Yao, Xianghua and Wang, Furong and Wu, Shuanghong and Liu, Xiaodong, Understanding the Doping Effect in Cspbi2br Solar Cells: Crystallization Kinetics, Defect Passivation and Energy Level Alignment. Available at SSRN: https://ssrn.com/abstract=4172830 or http://dx.doi.org/10.2139/ssrn.4172830

Haoyu Wang

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Ze Wang

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Xinyu Tang

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Li Liu

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Haolin Zhang

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Xianghua Yao

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Furong Wang

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Shuanghong Wu

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

Xiaodong Liu (Contact Author)

University of Electronic Science and Technology of China (UESTC) ( email )

610054
China

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