Two-Dimensional Cs3bi2i6cl3 Perovskite for Resistive Switching Behaviors and Artificial Synaptic Simulation

Abstract

Two-dimensional Cs3Bi2I6Cl3 perovskite films have been successfully grown on indium tin oxide (ITO) glass substrates, which were used to fabricate the memory device with the structure of Al/Cs3Bi2I6Cl3/ITO. The current memristor exhibited bipolar resistive switching behaviors. Both the endurance and retention time tests clearly demonstrate the excellent stability of the present device. Moreover, the short-term plasticity of biological synapse was successfully simulated by evaluating the conductance responses of Al/Cs3Bi2I6Cl3/ITO device under applying various voltage pulses in detail. The enhancement of conductance triggered by 10 consecutive pulses (-0.5 V, 10 ms) was up to be around 40% compared to the resting conductance level. The simulations of long-term plasticity for biological synapse were also performed through spike-timing-dependent plasticity. The fitted time constants are 8.38 and 6.89 ms for long-term potentiation and long-term depression, respectively, which are comparable to the millisecond-scale response time in biological synapses. In addition, based on the photoelectric response ability, the current Al/Cs3Bi2I6Cl3/ITO device established associative learning behavior successfully by simulating the Pavlov’s dog experiment. The present Al/Cs3Bi2I6Cl3 /ITO device is promising to be used for resistive switch and biological synaptic simulation of next generation memristors.

Keywords: Two-dimensional perovskite, Resistive switching, Artificial synapse, Associative learning.