A Multilayered Thin Film Ysz Based Electrochemical Oxygen Sensor with Ito as a Working Electrode for Low Temperature Operation

A compact thin film based multi-layered YSZ oxygen sensor configured as STO(sub)Pt|Cu-Cu2O|YSZ|ITO with Cu+Cu2O and ITO serving as the reference and working electrodes respectively is realized on (100) SrTiO3 (10 mm×10 mm) and its performance is demonstrated. The sensor operates at temperatures as low as 623K in contrast to 923 K for PT|Cu-Cu2O|YSZ|Pt based conventional oxygen sensors and responds to 1 to 1000 ppm of oxygen in inert streams reliably without suffering any baseline drifts. Polarization resistance for charge transfer across the Pt/YSZ interface demanding an operating temperature of 923 K is greatly suppressed across ITO/YSZ interface owing to its solubility in cubic zirconia which is responsible for low temperature operation.

Keywords: Potentiometric thin film oxygen sensor, PLD, SIMS, EIS, Tafel Plots

Suggested Citation: Suggested Citation

Ravindranath, Nair Afijith and Natarajan, Gomathi and Bahuguna, Ashok and Pandian, Ramanathaswamy and Gnanasekar, K. I., A Multilayered Thin Film Ysz Based Electrochemical Oxygen Sensor with Ito as a Working Electrode for Low Temperature Operation. Available at SSRN: https://ssrn.com/abstract=4328252 or http://dx.doi.org/10.2139/ssrn.4328252