Multi-Color Emission Based on Ingan/Gan Micro Truncated-Pyramid Arrays

Abstract

3D micro-nano devices are expected to become the mainstay of multi-color solid-state lighting in the future because of their broad-band characteristic and the advantage of integrating the monolithic LED on a single chip. In this work, InGaN/GaN micro truncated-pyramid arrays with six equivalent(10-11) semi-polar facets and one(0001) polar facet were successfully prepared by the metal organic chemical vapor deposition technology. The average diameter of the obtained uniform micro truncated-pyramids was 6.8μm with a height of 2.4μm. According to the results of micro-photoluminescence performed, the InGaN/GaN micro truncated-pyramid arrays can achieve multi-color emission from blue to red. The luminescent positions corresponding to different wavelengths were detected by the cathode luminescence spectrum. The multi-color emission was related to the quantum hybrid structures apart from discrepancy of In composition in different positions.The developed microstructure can create multi-color emission by combining distinct luminescence modes, which can aid in the design of future optoelectronic devices.

Keywords: InGaN/GaN micro truncated-pyramid arrays, selective area growth, quantum hybrid structures, multi-color, optical property