Study on Oxygen Control of Large Diameter N-Type Monocrystalline Silicon with Large Thermal Field

Abstract

With the rapid development of photovoltaics industry under the background of "carbon peaking and carbon neutrality", the growth of large diameter N-type monocrystalline silicon will become the mainstream technology in the next few years. However, the problem of high oxygen content in large diameter monocrystalline silicon will become more prominent and should be solved properly. This paper proposes a variety of oxygen control techniques based on the both numerical simulations and on-site experiments. The influence of new thermal field structure and optimized process on oxygen content in silicon melt during crystal growth is analyzed by numerical simulation and further confirmed by the corresponding on-site experiments. In addition, the synergistic effects of the comprehensive application of these proposed oxygen control techniques has been verified by simulations and on-site experiments, with the lowest average oxygen content of 11.95 ppma. The results provide some guidance for the growth of large diameter N-type monocrystalline silicon with large thermal field, which may be valuable for the development of photovoltaics industry.

Keywords: Photovoltaics, large diameter N-type monocrystalline silicon, Numerical simulation, oxygen control technology