Transparent Pn Junction of Mg:Nio/Zno/Sno2 Via Potential Regulation and Carrier Injection of Zno Transition Layer

Abstract

Transparent pn junction of Mg:NiO/ZnO/SnO2 is prepared via approach of continuous co-sputtering-annealing method. Mg:NiO/ZnO/SnO2 pn junction exhibits transmittance of ~85%, photovoltaic enhancement of ~1.6×102 folds, stable output during 9 weeks’ cycle. It’s mainly attributed to ultrathin ZnO transition layer, obtaining appropriate Fermi level and higher intrinsic carrier concentration can optimize carrier equilibrium, meanwhile sustaining high transparency and providing an interface optimization. Furthermore, extra hole carrier caused by Ni vacancy and Ni2+/Ni3+ mixed state can take full advantage of the defects to optimize kinetic equilibrium. Additionally, the intrinsic high physical-chemical properties of inorganic NiO, ZnO and SnO2 can increase intrinsic stability.

Keywords: Transparent, Photovoltaic, Carrier Injection, Potential regulation