Structure and Property of Ga2(Nxo1-X)3 Films Synthesized by Sol-Gel Method

14 Pages Posted: 19 Aug 2023

See all articles by Qing Zhang

Qing Zhang

Beijing University of Technology

Jinxiang Deng

Beijing University of Technology

R.D. Li

Beijing University of Technology

X. Meng

Beijing University of Technology

L.N. Hu

Beijing University of Technology

J.X. Luo

Beijing University of Technology

L. Kong

Beijing University of Technology

L.J. Meng

Beijing University of Technology

J. Du

Beijing University of Technology

Aleksei V. Almaev

National Research Tomsk State University

Hongli Gao

Beijing University of Technology

Qianqian Yang

Beijing University of Technology

G.S. Wang

Beijing University of Technology

J.H. Meng

Beijing University of Technology

Xiaolei Wang

Beijing University of Technology

X.L. Yang

China Jiliang University

J.Y. Wang

Beijing University of Technology

Abstract

Ga2O3 exhibits great potential for applications in solar-blind ultraviolet photodetector, high-power electronic devices and solid-state light-emitting due to its ultra-wide bandgap and high Baligas figure of merit. Here, Ga2(NxO1-x)3 films with varied nitrogen contents were prepared by the sol-gel technique. The structural and optical properties of Ga2(NxO1-x)3 films were examined in detail by X-ray diffraction (XRD), Scanning electron microscope-Energy Dispersive Spectrometer (SEM-EDS), Fourier Transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Ultraviolet and Visible spectrophotometer (UV-VIS), Photo-luminescence spectroscopy (PL). And heterojunctions consisting of Ga2(NxO1-x)3 films and n-type silicon were built. XRD analysis reveals that nitrogen doping contributes for growth of greater crystallines and SEM-EDS measurements confirm that the monoclinic crystal structure of Ga2(NxO1-x)3 is maintained to doping level of 3.26wt%; FTIR information indicates that nitrogen prefers to substitute for the O1 and O2 site of Ga2O3; XPS offers evidence that nitrogen tends to occupy oxygen vacancies and generate more gallium vacancies; UV-VIS shows that impurity defects appear on valence band, and the absorption position undergoes a red shift with nitrogen above 1.32wt%; PL shows Ga2(NxO1-x)3 films can emit light of various colors under excitation at 325nm, and the acceptor level is at 1.63eV~2eV above the valence band; The conductivity of Ga2(NxO1-x)3 films is changed from n-type to p-type when nitrogen-doping is 0.96 wt% and the I-V curve composed of Ga2(NxO1-x)3 and Ga2O3 shows PDCR=43 under the 254nm light. Therefore, the development of nitrogen-doped β-Ga2O3 has potential opportunities for applications in photoelectric devices.

Keywords: Ga2O3, N-doped, Sol-gel, Photoluminescence, I-V characteristics

Suggested Citation

Zhang, Qing and Deng, Jinxiang and Li, R.D. and Meng, X. and Hu, L.N. and Luo, J.X. and Kong, L. and Meng, L.J. and Du, J. and Almaev, Aleksei V. and Gao, Hongli and Yang, Qianqian and Wang, G.S. and Meng, J.H. and Wang, Xiaolei and Yang, X.L. and Wang, J.Y., Structure and Property of Ga2(Nxo1-X)3 Films Synthesized by Sol-Gel Method. Available at SSRN: https://ssrn.com/abstract=4545818 or http://dx.doi.org/10.2139/ssrn.4545818

Qing Zhang

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

Jinxiang Deng (Contact Author)

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

R.D. Li

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

X. Meng

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

L.N. Hu

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

J.X. Luo

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

L. Kong

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

L.J. Meng

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

J. Du

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

Aleksei V. Almaev

National Research Tomsk State University ( email )

Russia

Hongli Gao

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

Qianqian Yang

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

G.S. Wang

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

J.H. Meng

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

Xiaolei Wang

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

X.L. Yang

China Jiliang University ( email )

J.Y. Wang

Beijing University of Technology ( email )

100 Ping Le Yuan
Chaoyang District
Beijing, 100020
China

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