Temperature Dependence of Electrical and Luminescent Properties in Ho3+ and Ho3+-Yb3+ Doped Pzn-11pt Ferroelectric Single Crystals

Abstract

Rare earth ions doped multifunction materials have been focused on attentions in the next generation electronics with integration, miniaturization and intenlligence. Herein, Ho3+ and Ho3+-Yb3+ doped Pb(Zn1/3Nb2/3)O3-11PbTiO3 (PZN-11PT) single crystals were elaborately designed and grown by the high temperature flux method. The as grown single crystals present excellent electric properties with high Curie temperatures (TC) is of 182 ℃ and 173 ℃, high remnant polarization (Pr) is of 37.8 μC/cm2 and 24.5 μC/cm2, large coercive fields (Ec) is of 16.8 kV/cm and 12.2 kV/cm for Ho3+ and Ho3+-Yb3+ doped PZN-11PT samples, respectively. Especially, the down- and up-conversion photoluminescence emissions behaviors showed that the Ho3+ and Ho3+-Yb3+ doped PZN-11PT crystals owned remarkable temperature sensing behavior which can be utilized in non-contact optical temperature sensing and detect phase transitions. These results present that the Ho3+ and Ho3+-Yb3+ doped PZN-11PT single crystals could be a promising candidate in optoelectronic devices.

Keywords: RE3+ doped PZN-11PT single crystal, Ferroelectric properties, Photoluminescence properties, Optical temperature sensing