Tailoring Indium Oxide Film Characteristics Through Oxygen Reactants in Atomic Layer Deposition with Highly Reactive Liquid Precursor

32 Pages Posted: 26 Dec 2023

See all articles by Seong-Hwan Ryu

Seong-Hwan Ryu

Hanyang University

TaeHyun Hong

Hanyang University

Su-Hwan Choi

Hanyang University

Kyuhyun Yeom

affiliation not provided to SSRN

Dae Won Ryu

affiliation not provided to SSRN

Jang-Hyeon Seok

affiliation not provided to SSRN

Jin-Seong Park

Hanyang University

Abstract

Indium oxide (InOx) films were deposited via atomic layer deposition (ALD) using a novel liquid indium precursor, dimethyl[N1-(tert-butyl)-N2,N2-dimethylethane-1,2-diamine]indium (DMITN). In this process, the reactant (H2O, O3, or O2 plasma) and substrate temperature (100–250 ℃) were varied. The DMITN precursor showed excellent reactivity with all three reactants. The growth characteristics (ALD window, growth per cycle, and step coverage) and film properties (impurities, stoichiometry, oxygen bonding state, crystallinity, film density, and electrical properties) differed based on the ALD process employed, ascribed to the distinct thermal energies and inherent reactivities of the chosen oxidants. As the oxidation energy of the reactants increased (H2O < O3 < O2 plasma), the growth per cycle (GPC) and the oxygen–indium bond ratio of InOx increased. Crystallinity analysis also revealed significant differences depending on the reactants, where the Hall mobility was predominantly influenced by the crystal alignment. The step coverage at an aspect ratio of 40:1 was markedly superior with the use of H2O and O3 reactants (approximately 95%) compared to that with O2 plasma (approximately 74%). These findings highlight the capability of controlling the growth and properties of InOx films by judiciously selecting the reactant, emphasizing the versatility of the DMITN precursor in ALD processes.

Keywords: Indium oxide, atomic layer deposition, oxygen reactants, substrate temperature, crystallinity.

Suggested Citation

Ryu, Seong-Hwan and Hong, TaeHyun and Choi, Su-Hwan and Yeom, Kyuhyun and Ryu, Dae Won and Seok, Jang-Hyeon and Park, Jin-Seong, Tailoring Indium Oxide Film Characteristics Through Oxygen Reactants in Atomic Layer Deposition with Highly Reactive Liquid Precursor. Available at SSRN: https://ssrn.com/abstract=4676122 or http://dx.doi.org/10.2139/ssrn.4676122

Seong-Hwan Ryu

Hanyang University ( email )

Seoul
Korea, Republic of (South Korea)

TaeHyun Hong

Hanyang University ( email )

Seoul
Korea, Republic of (South Korea)

Su-Hwan Choi

Hanyang University ( email )

Kyuhyun Yeom

affiliation not provided to SSRN ( email )

No Address Available

Dae Won Ryu

affiliation not provided to SSRN ( email )

No Address Available

Jang-Hyeon Seok

affiliation not provided to SSRN ( email )

No Address Available

Jin-Seong Park (Contact Author)

Hanyang University ( email )

Seoul
Korea, Republic of (South Korea)

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