Cdte/Si Based Highly Efficient Thin Film Tandem Solar Cell Using a Novel Sb2se3 as Electron Transport Layer: Development, Numerical Modelling and Analysis

Abstract

The paper reports a numerical analysis of novel Cadmium telluride (CdTe)/ Silicon (Si) based highly efficient thin film tandem solar cell (TSC) integrating antimony selenide (Sb2Se3) as an electron transport layer (ETL). The novelty of the presented thin film tandem solar cell has Sb2Se3 layer used as an ETL layer, which directly addresses the Shockley-Queisser barrier limits of single junction solar cells. The structure of cell has made up as contacts from metals Al or Ni, absorber layer from CdTe/Cadmium Sulfide (CdS), Sb2Se3 layer and silicon as an active layer. The performance of Glass/SnO2(10 nm)/CdS(50 nm)/CdTe(2.5 μm)/Sb2Se3 (11.2 μm)/Si(200 μm)/Al structure gives potential results as open circuit voltage (VOC) is 1009 mV, Short circuit current density (JSC) is 44.88 mA/cm2, Fill Factor (FF) is 88.38 and PCE improvement up to 40.02 %. The main praise of tandem structure introduces Sb2Se3 layer which achieved the maximum conversion efficiency of 40.02 %.

Keywords: Antimony Selenide (Sb2Se3), Electron Transport Layer (ETL), Photovoltaic, SCAPS-1D, Tandem Solar Cell (TSC)