Effect of Hydrogen on Graphene Growth on Sic(0001) Under Atmospheric Pressure

Abstract

Addressing the challenge of preparing large-area, high-quality graphene on the silicon carbide (SiC) surface under easily implementable conditions is a critical aspect that requires resolution. In this study, we present a direct epitaxial growth method for graphene on the SiC(0001) surface under atmospheric pressure. Our focus extends beyond the growth process itself to investigate the important role of hydrogen in shaping the quality and morphology of both the substrate and the graphene. By showing the influence of hydrogen at various stages, our research aims to contribute insights that advance the seamless integration of graphene into the semiconductor field.

Keywords: Epitaxial Growth, Graphene, Silicon carbide, Atmospheric pressure, Hydrogen.