Dual-Functional Tungsten-Doped Nio for Highly Sensitive Triethylamine Sensor with Ppb Level Detection Limit

25 Pages Posted: 11 Jun 2024

See all articles by Shangyan Wang

Shangyan Wang

Hebei University of Technology

Mengjie Wang

Hebei University of Technology

Junkai Shao

Hebei University of Technology

Xichen Liang

University of California

Guofeng Pan

Hebei University of Technology

Yuhang Qi

Hebei University of Technology

Abstract

In this study, non-stoichiometric W-doped NiO nanoflowers were synthesized using a straightforward hydrothermal method, significantly enhancing the sensing performance towards triethylamine through dual-functional tungsten doping. The optimal doping concentration not only increased the specific surface area of NiO from 25.54 to 189.19 m2g-1 but also reduced the formation energy of oxygen vacancies from 5.349 eV to 4.227 eV. The sensor containing 4 at% W-doped NiO demonstrated exceptional sensitivity to triethylamine, achieving a detection level as high as 229 for concentrations of 100 ppm at 237.5°C. This triethylamine sensor represents a 135-fold enhancement over sensors fabricated from undoped NiO, and offers a rapid response/recovery time of 8 and 30 seconds, respectively. Furthermore, at a lower triethylamine concentration of 50 ppb, the sensor exhibited a response value of 1.32, indicating a lower detection limit.

Keywords: Gas sensor, Triethylamine, Tungsten doping, NiO, Oxygen vacancies

Suggested Citation

Wang, Shangyan and Wang, Mengjie and Shao, Junkai and Liang, Xichen and Pan, Guofeng and Qi, Yuhang, Dual-Functional Tungsten-Doped Nio for Highly Sensitive Triethylamine Sensor with Ppb Level Detection Limit. Available at SSRN: https://ssrn.com/abstract=4861153 or http://dx.doi.org/10.2139/ssrn.4861153

Shangyan Wang

Hebei University of Technology ( email )

Tianjin
China

Mengjie Wang

Hebei University of Technology ( email )

Tianjin
China

Junkai Shao

Hebei University of Technology ( email )

Tianjin
China

Xichen Liang

University of California ( email )

540 Alumni Ln
Davis, CA 95616
United States

Guofeng Pan (Contact Author)

Hebei University of Technology ( email )

Tianjin
China

Yuhang Qi

Hebei University of Technology ( email )

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