冷冻介导和盐辅助液相剥离相结合制备GaSe纳米片，并通过拉曼信号衰减估计吸收系数

Abstract

In this study, a novel preparation method combining cryo-mediated method and salt-assisted liquid-phase exfoliation is presented for the preparation of Gallium Selenide (GaSe) nanosheets and the absorption coefficient are estimated by the Raman signal attenuation method on silicon substrates.It was found that Potassium citrate (C6H5K3O7·H2O) as an accelerator increased the lateral size of GaSe nanosheets, while employing liquid nitrogen as a cryo-mediation significantly reduced the surface roughness of the nanosheets. Furthermore, a correlation exists between the duration of cryo-pretreatment and the thickness distribution of GaSe nanosheets.Using the absorption overlayer model, the study experimentally determined more accurate absorption coefficient of 2D GaSe nanosheets by analyzing the changes in Raman signal intensity on a silicon substrate induced by GaSe nanosheets with varying thicknesses, resulting in an average absorption coefficient of 5.68×104 cm-1.This study introduces a novel approach to prepare GaSe and other two-dimensional(2D) material nanosheets with large size and low roughness，based on which the absorption coefficient of GaSe nanosheets are also determined in a more precise way.

Keywords: GaSe Liquid-phase exfoliation Absorption coefficient Substrate Raman Semiconductors