Characterization of Irradiation-Induced Dislocation Loops in Vanadium at 25-500 °C

32 Pages Posted: 25 Jun 2024

See all articles by Qiuhong Zhang

Qiuhong Zhang

Beijing Institute of Technology

Lei Li

Beijing Institute of Technology

Shang Chen

Beijing Institute of Technology

Y. Dong

Beijing Institute of Technology

Engang Fu

Peking University - State Key Laboratory of Nuclear Physics and Technology

X. Chang

Beijing Institute of Technology

Lixia Bao

Beijing Institute of Technology

Xun Guo

Beijing Institute of Technology

Ke Jin

Beijing Institute of Technology - Advanced Research Institute of Multidisciplinary Science

Yunfei Xue

Beijing Institute of Technology - School of Materials Science and Engineering

Abstract

V-based alloys have emerged as promising candidates for structural materials in fusion applications. However, as its base metal, the response of V to irradiation has received limited attention in prior studies. To gain a fundamental understanding of the irradiation damage in V, its microstructure evolution under 6 MeV Ti ion irradiation at 25-500 °C is investigated in the present study, with the focus on the detailed and comprehensive characterization of the behavior of the irradiation-introduced dislocation loops. Under room temperature irradiation, the “black dot” dislocation loops agglomerate linearly into rafts, during which their Burgers vectors are well aligned. With the temperature increases to 300 °C, the size of rafts increases and the density decreases, while the size of small loops maintains similar to the room temperature irradiation condition. As the irradiation temperature reaches 500 °C, the defects become highly mobile, resulting in the formation of extended dislocation loops or lines with hundreds of nanometers in size, with the rafts vanish. All the observable loops under this irradiation temperature range exhibit the Burgers vectors of a/2<111>. All the loops observed in the displacement region are identified to be interstitial-type, while a small portion of loops observed in the diffusion region under elevated temperatures are vacancy-type.

Keywords: V, ion irradiation, irradiation temperature, dislocation loop, loop rafting

Suggested Citation

Zhang, Qiuhong and Li, Lei and Chen, Shang and Dong, Y. and Fu, Engang and Chang, X. and Bao, Lixia and Guo, Xun and Jin, Ke and Xue, Yunfei, Characterization of Irradiation-Induced Dislocation Loops in Vanadium at 25-500 °C. Available at SSRN: https://ssrn.com/abstract=4875467 or http://dx.doi.org/10.2139/ssrn.4875467

Qiuhong Zhang

Beijing Institute of Technology ( email )

5 South Zhongguancun street
Center for Energy and Environmental Policy Researc
Beijing, 100081
China

Lei Li

Beijing Institute of Technology ( email )

5 South Zhongguancun street
Center for Energy and Environmental Policy Researc
Beijing, 100081
China

Shang Chen

Beijing Institute of Technology ( email )

Y. Dong

Beijing Institute of Technology ( email )

5 South Zhongguancun street
Center for Energy and Environmental Policy Researc
Beijing, 100081
China

Engang Fu

Peking University - State Key Laboratory of Nuclear Physics and Technology ( email )

X. Chang

Beijing Institute of Technology ( email )

5 South Zhongguancun street
Center for Energy and Environmental Policy Researc
Beijing, 100081
China

Lixia Bao

Beijing Institute of Technology ( email )

Xun Guo

Beijing Institute of Technology ( email )

5 South Zhongguancun street
Center for Energy and Environmental Policy Researc
Beijing, 100081
China

Ke Jin (Contact Author)

Beijing Institute of Technology - Advanced Research Institute of Multidisciplinary Science ( email )

Beijing, 100081
China

Yunfei Xue

Beijing Institute of Technology - School of Materials Science and Engineering ( email )

5 South Zhongguancun street
Center for Energy and Environmental Policy Researc
Beijing, 100081
China

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