Nature of Pits on the Surface of Inalas Layer Grown on the (001) Inp Substrate

Abstract

The structural and optical properties of InAlAs layers both lattice-matched and slightly lattice-mismatched with the InP substrate have been studied. The relationship between the surface morphology of the InAlAs layer and its composition and structure has been demonstrated. A formation model for pits on the InAlAs surface located under the depleted In clusters based on the reduction of the energy barrier of In desorption due to the defect deformation potential has been proposed. The magnitude of this reduction has been estimated.

Keywords: A1. Surface processesA1. DefectsA1. DesorptionA3. Molecular beam epitaxyB1. Semiconducting aluminum compoundsB2. Semiconducting indium compounds