Discovery of New Spin-Gapless Semiconductor in Quaternary Heusler Compounds by Addition of Lanthanides

Abstract

Spin-gapless semiconductor (SGS) materials are promising for spintronics and magnetism due to their high spin polarization, low energy excitation, and enhanced electron mobility, despite their typically low Curie temperatures (Tc). Heusler alloys, known for their high Tc, are a potential solution to this limitation. This study involved adding lanthanide elements to a 26-valence-electron quaternary Heusler alloy, resulting in the synthesis of nine new lanthanide-based SGS materials, including RhCoPrSb, RhCoNdSb, and RhCoPmSb. These novel materials not only expand the SGS material base but also offer insights for further research, including the potential doping of actinide elements to discover more SGS materials. The integration of lanthanide elements may also enhance the electrical, optical, and magnetic properties of these SGS materials, opening new possibilities for future applications.

Keywords: rare earth elements、spin gapless semiconductor、first principles calculation、quaternary Heusler alloy