High Thermal Conductivity Graphene-Based Interfacial Materials Through Oriented Assembly and Catalytic Graphitization for Thermal Management

Abstract

Graphene, with its excellent thermal conductivity, is ideal for heat dissipation in small electronic devices. In this study, we propose a method that combines magnetic field-induced assembly and catalytic graphitization to enhance the thermal conductivity of graphene films. Fe3O4 was loaded onto graphene oxide (GO) to form magnetic graphene oxide (MGO), which was aligned into an ordered structure under the influence of an external magnetic field. Glucose was then added as a carbon source and thermally reduced at 800°C to fill defects in the MGO films and reduce phonon scattering. Catalytic graphitization using Fe as a catalyst at 1500°C converted the amorphous carbon to graphitic carbon, further minimizing phonon scattering. Finally, a second graphitization at 1800°C was performed to repair structural defects, resulting in a thermal conductivity of 1004.4 W/mK, significantly higher than that of the graphene film obtained by reducing GO under the same conditions (420.2 W/mK). This energy-efficient approach offers a promising method for preparing high-thermal-conductivity graphene-based materials for future applications.石墨烯具有优异的导热性，非常适合小型电子设备的散热。在这项研究中，我们提出了一种结合磁场诱导组装和催化石墨化的方法，以增强石墨烯薄膜的热导率。Fe3O4 被负载到氧化石墨烯 （GO） 上以形成磁性氧化石墨烯 （MGO），在外部磁场的影响下排列成有序结构。然后添加葡萄糖作为碳源，并在 800°C 下进行热还原，以填充 MGO 膜中的缺陷并减少声子散射。在 1500°C 下使用 Fe 作为催化剂进行催化石墨化，将无定形碳转化为石墨碳，进一步最大限度地减少了声子散射。最后，在 1800°C 下进行第二次石墨化以修复结构缺陷，得到 1004.4 W/mK 的热导率，明显高于相同条件下通过还原 GO 获得的石墨烯薄膜的热导率 （420.2 W/mK）。这种节能的方法为制备用于未来应用的高导热石墨烯基材料提供了一种很有前途的方法。

Keywords: Magnetic graphene oxide, Magnetic field-induced, Catalytic graphitization, Graphene film, Thermal conductivity