The Influence of Fenton Reaction Chemical Parameters on the Removal of Single Crystal Diamond

Abstract

Single Crystal Diamond (SCD), as a new generation semiconductor material, is the ideal material for electronic device applications. However, SCD’s extremely high hardness and chemical inertness result in very low processing efficiency. This paper employs friction and wear experiments to study the influence of different chemical reaction parameters in the Fenton reaction on the material removal of SCD and reveals the mechanism of material removal. The results indicate that the hydroxyl radicals (·OH) generated by the Fenton reaction directly determine the material removal characteristics of SCD; the higher the ·OH concentration, the greater the SCD’s removal amount. Compared to the liquid-phase catalyst FeSO4, the solid-phase catalyst Fe3O4 achieves a transmittance of 89.9% for methyl orange solution, an increase of 9.9%; the removal amount for SCD is 245.56 μm2, an increase of 7.2%, resulting in smoother wear scar morphology. Increasing the concentration of catalysts and oxidants can enhance transmittance, increase ·OH concentration, and thereby improve the material removal capability for SCD. However, excessively high concentrations can lead to the annihilation of ·OH, exacerbate tool head wear, and degrade the quality of wear scar morphology. As the solution pH increases, the transmittance of methyl orange decreases, ·OH concentration decreases, SCD’s removal amount decreases, tool head wear increases, and the quality of wear scar morphology declines. The particle size of Fe3O4 has a minor impact on transmittance, ·OH concentration, SCD’s removal amount, and tool head wear. The removal mechanism of SCD based on the Fenton reaction is that the ·OH generated can oxidize the C atoms on the surface of the SCD wafer, forming C-O, C=O, and C-H functional groups, which reduce the bonding energy between C-C bonds in the SCD matrix, forming an oxide layer that allows for efficient material removal at mechanical action.

Keywords: Single Crystal Diamond, Fenton Reaction, Hydroxyl Radicals (·OH), Material Removal Characteristics, Material Removal Model