Synthesis, Crystal Structure and Physical Properties of Thrusn with a Distorted Kagome Structure

Abstract

We report the synthesis and comprehensive analysis of a new ternary compound, ThRuSn, featuring a distorted kagome structure composed of Th atoms. The compound crystallizes in a ZrNiAl-type structure with lattice parameters a = b = 7.4599(6) Å and c = 4.1306(3) Å. It displays metallic behavior, low magnetoresistance, and Pauli paramagnetism, as evidenced by electrical resistivity and magnetic susceptibility measurements. Hall effect measurements reveal that the carrier type follows a single-band model and is predominantly characterized by hole type. The electronic coefficient, γe = 3.6 mJ K−2 mol−1, was derived from low-temperature specific heat. Furthermore, first-principles calculations suggest that the electron states near the Fermi energy are primarily influenced by the Ru and Th states. The electronic band structure exhibits topologically nontrivial crossings, including van Hove singularities and Dirac cones at the M and K points. This study contributes to the development of new material platforms at the forefront of ternary equiatomic intermetallic compounds and distorted kagome metal research.

Keywords: ThRuSn, Distorted Kagome, Transport property, Topology