Rational Introducing of Functional Spacers to Realize a Novel Organometallic Polymer with Multilevel Memory Behaviors

37 Pages Posted: 9 Feb 2025

See all articles by Guping Zhang

Guping Zhang

Changshu Institute of Technology

Qijian Zhang

Changshu Institute of Technology

Hanrui Liu

Changshu Institute of Technology

Wancheng Luo

Changshu Institute of Technology

Huilong Dong

Changshu Institute of Technology

Jianrong Zeng

Chinese Academy of Sciences (CAS) - Shanghai Institute of Applied Physics

Yang Li

affiliation not provided to SSRN

Ya Yang

Soochow University

Feng Zhou

Changshu Institute of Technology

Abstract

Multilevel resistive random-access memory (ReRAM) is well-researched recently to meet the ever-growing data-storage requirement. However, the proposed mechanisms as charge trap, charge transfer etc. are all highly dependent on molecular stacking regularity. Thus, how to improve the molecular stacking styles is a scientific issue that needs to be solved urgently. In this work, a rational modified organometallic conjugated polymer P(DTPDI-BDT-DPFc) is rational designed with the introduce of 1,1’-diphenyl-substituted ferrocene (DPFc) and a large conjugated spacer of benzo[1,2-b:4,5-b']dithiophene (BDT). UV-vis spectrum confirms the increased main-chain conjugation and the improved coplanar backbone of this new-made organometallic polymer. XRD and GIWAXS measurement shows the regioregularity aggregation and a preferential face-on orientation of P(DTPDI-BDT-DPFc) backbone relative to the substrate. The following P(DTPDI-BDT-DPFc) devices indeed exhibit a specific, stable, and rewritable multilevel memory performance that induced by the successive oxidation of BDT and Fc units. This work provides a reliable strategy as rational introducing of desirable functional spacers to realize excellent optoelectronic performance.

Keywords: ReRAM, functional spacers, organometallic polymer, regioregularity aggregation, multilevel memory performance

Suggested Citation

Zhang, Guping and Zhang, Qijian and Liu, Hanrui and Luo, Wancheng and Dong, Huilong and Zeng, Jianrong and Li, Yang and Yang, Ya and Zhou, Feng, Rational Introducing of Functional Spacers to Realize a Novel Organometallic Polymer with Multilevel Memory Behaviors. Available at SSRN: https://ssrn.com/abstract=5129873 or http://dx.doi.org/10.2139/ssrn.5129873

Guping Zhang (Contact Author)

Changshu Institute of Technology ( email )

No.99,South Third Ring Road
Changshu
China

Qijian Zhang

Changshu Institute of Technology ( email )

No.99,South Third Ring Road
Changshu
China

Hanrui Liu

Changshu Institute of Technology ( email )

No.99,South Third Ring Road
Changshu
China

Wancheng Luo

Changshu Institute of Technology ( email )

No.99,South Third Ring Road
Changshu
China

Huilong Dong

Changshu Institute of Technology ( email )

No.99,South Third Ring Road
Changshu
China

Jianrong Zeng

Chinese Academy of Sciences (CAS) - Shanghai Institute of Applied Physics ( email )

Shanghai, 201204
China

Yang Li

affiliation not provided to SSRN ( email )

No Address Available

Ya Yang

Soochow University ( email )

No. 1 Shizi Street
Taipei, 215006
Taiwan

Feng Zhou

Changshu Institute of Technology ( email )

No.99,South Third Ring Road
Changshu
China

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