Unlocking the Potential of Inas Single Crystals: Effects of S and Zn Doping on Their Properties

Abstract

To unlock the application potential of InAs single crystals in semiconductor devices, undoped, S-doped, and Zn-doped InAs single crystals were grown using the vertical gradient freezing (VGF) method, and their properties were systematically investigated. It was observed that doping significantly reduced the number of grown-in dislocation defects, achieving an unprecedented average etch pit density (EPD) of 45 cm−2 in the S-doped InAs wafer. Doping concentrations in the range of 1017 to 1018 cm−3 did not induce significant lattice distortion but resulted in a notable decrease in infrared transmission. Further investigations revealed that S and Zn dopants show different effects on the optical energy gap and work function of InAs. Additionally, the electrical properties of n-type undoped and S-doped InAs, as well as p-type Zn-doped InAs, were studied. This work not only introduces a novel method for boosting the performance of InAs single crystals, but also provides crucial perspectives on the impacts of S and Zn doping.

Keywords: InAs single crystal, S doping, Zn doping, dislocation defect, electrical and optical properties