Ga₂Se₃-Based Ovonic Threshold Switching Selector for High-Density Memory Applications

Abstract

The increasing demand for high-density and high-speed memory systems, driven by big data and artificial intelligence, presents significant challenges for current information storage architectures, particularly in 3D stacking technologies. Selector devices with low leakage current and high thermal stability remain a critical limitation. This study investigates Ga₂Se₃ as a simple binary Ovonic Threshold Switching (OTS) material through advanced fabrication, characterization, and first-principles simulations. Our key findings demonstrate that Ga₂Se₃ exhibits exceptional low leakage current (~8 nA), thermal stability (up to 400 °C), excellent performance at dimensions as small as 60 nm, and fast switching speed (~10 ns). These results, combined with insights into its electronic state localization and bonding characteristics, position Ga₂Se₃ as a promising candidate for next-generation high-density storage and computing technologies.

Keywords: Ovonic threshold switching, Amorphous, Density functional theory, Thermal stability, Leakage