Suzuki Segregation of Alloying Elements at Stacking Faults In Ag-Based Alloys

Abstract

Computational results demonstrate that the distance between the alloying element and slip plane considerably influences the  value of the Ag supercell. Specifically, doping with Zn, In, and Sn at the slip plane substantially reduces the  value, resulting in the Suzuki effect. Moreover, the addition of W, Ir, and Cr can increase the unstable stacking fault energy ( ) and ideal shear strength ( ) of the Ag supercell in the  slip system, increasing the nucleation energy barrier of  Shockley partial dislocation and enhancing the yield strength of Ag crystals. The  and  values of the Ag supercell in the  slip system increase with the formation enthalpy of point defects (H), indicating that with the increase of H, dislocation motion is impeded and the creep resistance of the Ag crystals is enhanced.

Keywords: Suzuki effect, stacking fault energy, ideal shear strength, Ag-based alloys