Design and Simulation of a Dual-Band Silicon Ring Resonator for Modulation and High-Resolution Sensing

Abstract

We present the design and simulation of a dual-band silicon ring resonator using COMSOL Multiphysics. In the C-band (λ ≈ 1.5603 μm), the structure exhibits a sharp resonance with FWHM = 0.00006 μm and Q ≈ 21,542, making it suitable for electro-optic modulation. In the O-band (λ ≈ 1.290 μm), two closely spaced resonance dips are observed. Under varying cladding refractive index (Δn = 0.0001~0.0008), the resonance wavelength shifts linearly, achieving a high sensitivity of 961.4~961.8 nm/RIU. Field distributions confirm TE0 modal operation and strong optical confinement. These results highlight the structure’s potential for dual-function photonic integration in both modulators and refractive index sensors.

Keywords: Silicon ring resonator、Dual-band photonic device、Electro-optic modulation、Refractive index sensor