Low Dislocation Density Germanium Crystal Growth by Modified Heat Exchange Method

Abstract

The germanium crystal growth process by a modified heat exchanger method under low temperature gradients conditions was investigated in this work.     The furnace and heat exchanger design was developed by modeling in STR CGSim 18. Optimal operating modes of heaters and theoretical calculations of the dislocation density distribution in crystals were obtained by computer simulation based on thermoelastic stress data using Alexander-Haasana models. The developed method of growing was tested during germanium crystals growth with diameter of 60 mm. As a result, a germanium single crystal in direction <111> with a dislocation density of 200-500 cm-2 was grown.

Keywords: Crystal growth, simiconductors, germanium