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Applications of p-n Homojunction ZnO Nanowires to One-Diode One-Memristor RRAM Arrays
27 Pages Posted: 29 Apr 2020 Publication Status: Accepted
Abstract
Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/ p-n ZnO NWs/ Ta2O5/ Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5G with AI in near future applications.
Keywords: nanowires, RRAM, diode, ZnO, homojunction
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